Realization of rectifying and resistive switching behaviors of mesoscopic niobium oxide-based structures

Autor:	N.А. Tulina, I. Yu. Borisenko, А.М. Ionov, I.М. Shmytko, А.А. Ivanov, А.N. Rossolenko
Rok vydání:	2014
Předmět:	Mesoscopic physics Materials science Anodizing business.industry Mechanical Engineering Schottky barrier Schottky diode Heterojunction Condensed Matter Physics Amorphous solid Mechanics of Materials Optoelectronics Niobium oxide General Materials Science business Diode
Zdroj:	Materials Letters. 136:404-406
ISSN:	0167-577X
DOI:	10.1016/j.matlet.2014.08.086
Popis:	We address bipolar resistive switching effects in structures based on oxides of transition metals which are promising for applications in modern memory devices. Mesoscopic niobium oxide film heterostrucures have been produced. The current–voltage characteristics of the heterostructures based on amorphous films of anodized niobium oxide show a diode character with a weak BRS effect that is more pronounced in structures based on crystalline niobium oxide films. Analysis of the conductivity mechanisms in the heterostructures obtained suggests that the diode behavior and the existence of bistable resistance states are related to modulation of a Schottky barrier formed by a niobium oxide layer with a variable resistance in the metal–oxide interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e26594a2fc0a96edfd1398b47658f1aa https://doi.org/10.1016/j.matlet.2014.08.086 Zobrazit plný text záznamu Full Text from ScienceDirect