Optical gain and linewidth enhancement factor in bulk GaN

Autor:	F Renzoni, Charles H. Patterson, John F. Donegan
Rok vydání:	1999
Předmět:	Range (particle radiation) Materials science Condensed matter physics business.industry Condensed Matter Physics Free carrier Electronic Optical and Magnetic Materials Laser linewidth Optics Carrier model Materials Chemistry Coulomb Electrical and Electronic Engineering business
Zdroj:	Semiconductor Science and Technology. 14:517-520
ISSN:	1361-6641 0268-1242
DOI:	10.1088/0268-1242/14/6/305
Popis:	Optical gain and the linewidth enhancement factor (or parameter) are calculated for bulk GaN. The results obtained using an interacting carrier model are compared with the ones derived from a free carrier theory. The Coulomb interaction leads to an enhancement of the gain and to a decrease of the parameter in the gain region. For the model including Coulomb interaction, the parameter for GaN at peak gain is in the range 1.7-1.9 at 300 K for carrier densities between 1.0 and 1.4 ? 1019 cm-3, which implies weak anti-guiding in this material. A discussion of the material parameters is included.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e261d6d41faee9483c340096f2f3cde8 https://doi.org/10.1088/0268-1242/14/6/305 Zobrazit plný text záznamu