MNOS load device
| Autor: | H.C. Lin, C.J. Varker |
|---|---|
| Rok vydání: | 1969 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Threshold voltage law.invention Non-volatile memory Hardware_GENERAL law Rise time Hardware_INTEGRATEDCIRCUITS Transient response Electrical and Electronic Engineering business Polarization (electrochemistry) Hardware_LOGICDESIGN Voltage |
| Zdroj: | Proceedings of the IEEE. 57:1793-1795 |
| ISSN: | 0018-9219 |
| DOI: | 10.1109/proc.1969.7417 |
| Popis: | Metal-nitride-oxide-semiconductor (MNOS) field-effect transistors can be changed from enhancement mode to depletion mode after the application of polarizing voltage. When such a polarized MNOS device is used as a load in a switching circuit, the supply voltage and the rise time are reduced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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