Cyclic Voltammetry of Semiconductor Photoelectrodes III: A Comparison of Experiment and Theory for n-Si and p-Si Electrodes
Autor: | Patrick G. Santangelo, D. Marya Lieberman, Nathan S. Lewis |
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Rok vydání: | 1998 |
Předmět: | |
Zdroj: | The Journal of Physical Chemistry B. 102:4731-4738 |
ISSN: | 1520-5207 1520-6106 |
Popis: | Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH−CoCp2+/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities. |
Databáze: | OpenAIRE |
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