Carrier–phonon interaction of GaAs/Al$$_{0.3}$$Ga$$_{0.7}$$As quantum dots grown by droplet epitaxy
| Autor: | Jong Su Kim, Il Ki Han, Inah Yeo, Jin Dong Song |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Field (physics) Phonon Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Coupling (probability) 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantum dot Condensed Matter::Superconductivity 0103 physical sciences Electrical and Electronic Engineering Dispersion (chemistry) Nanoscopic scale |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:16338-16342 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | We examined several types of GaAs/Al $$_{0.3}$$ Ga $$_{0.7}$$ As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton–phonon coupling channels of several QD types with different temperature dispersions. Each phonon dispersion was calculated for up to three different coupled modes in a phonon field. Nanoscale phonon engineering can exploit the dynamics of exciton–phonon interactions for the design of efficient acousto-excitonic devices and engineered QD single-photon sources. |
| Databáze: | OpenAIRE |
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