Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal
| Autor: | Noriyuki Iwamuro, Ruito Aiba, Hiroshi Yano, Shinsuke Harada, Masakazu Baba, Kevin Matsui |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky barrier Schottky diode chemistry.chemical_element Dissipation 01 natural sciences Electronic Optical and Magnetic Materials Nickel chemistry.chemical_compound chemistry 0103 physical sciences Trench MOSFET Silicon carbide Optoelectronics Electrical and Electronic Engineering business Pulse-width modulation |
| Zdroj: | IEEE Electron Device Letters. 41:1810-1813 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2020.3031598 |
| Popis: | In this letter, the authors demonstrated superior electrical characteristics of a 1.2 kV SiC Schottky barrier diode-wall integrated trench MOSFET (SWITCH-MOS) with the higher Schottky barrier height of nickel. It was confirmed that a significant improvement in short-circuit capability was achieved with no sacrifice of on resistance, because the electron leakage current through the integrated Schottky barrier diode (SBD), caused by thermionic-field emission, could be successfully suppressed. Further, although the integrated SBD with nickel showed 0.25 V greater forward voltage drop than that with titanium, the on resistance and switching characteristics were similar in the two devices. The results of the study showed that the SWITCH-MOS with nickel can achieve 21.0% less power dissipation in high frequency pulse width modulation inverters, compared to standard SiC trench MOSFETs. |
| Databáze: | OpenAIRE |
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