Simulation and optimization of the CMOS structure with vertically integrated single-contact photodetectors with separation of colors in the visible spectral region

Autor:	E. B. Volodin, E. A. Ignat’eva, V. V. Uzdovskii
Rok vydání:	2008
Předmět:	Materials science business.industry Separation (aeronautics) Transistor Photodetector Condensed Matter Physics Vertical integration Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optics CMOS law Optoelectronics business
Zdroj:	Semiconductors. 42:1527-1531
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782608130162
Popis:	The CMOS structure with vertically integrated minimum-sized photodetector cells with vertical separation of colors (R, G, B) in the visible spectral region was simulated. These single-contact cells are arranged (in view of area deficiency) in IR cell gaps along with (and partially under) readout-circuit transistors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2522c70cb9a7430770e13ccb5dad46f https://doi.org/10.1134/s1063782608130162 Zobrazit plný text záznamu Plný text ve formátu PDF