Selective secondary nucleation controlled (001)-texture in boron doped diamond films by increasing the concentrations of tetramethylsilane and trimethylborane
| Autor: | Hao Zhuang, Haiyuan Fu, Xin Jiang |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Material properties of diamond Nucleation Diamond Nanotechnology Surfaces and Interfaces General Chemistry engineering.material Condensed Matter Physics Surfaces Coatings and Films Trimethylborane chemistry.chemical_compound Chemical engineering chemistry Materials Chemistry engineering Texture (crystalline) Thin film Anisotropy Tetramethylsilane |
| Zdroj: | Surface and Coatings Technology. 259:526-531 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2014.10.035 |
| Popis: | Diamond shows anisotropic physical and chemical properties, depending on its crystallographic orientations. Owing to the lack of large-scale single crystalline diamond substrates, however, the growth of textured diamond film becomes a popular way in tailoring its optical, electrical, mechanical, and thermal properties for specific applications. In the present study, we show that the (001)-texture of boron doped diamond (BDD) thin film can be controlled by a selective secondary nucleation process. To achieve this, a low concentration of tetramethylsilane (TMS) was introduced to induce a high secondary nucleation rate on the non-{001} diamond facets, hindering their lateral growth. In contrast, the continuous growth and expansion of the {001} facets are kept, which leads to the formation of (001)-textured diamond film. In addition, the orientation of the film can be continuously improved by increasing the concentration of either TMS or trimethylborane (TMB) in the gas phase within a relatively large parameter window. This study not only presents a new mechanism in controlling the textured of diamond, but also sheds some light on the fundamental research regarding the diamond growth. |
| Databáze: | OpenAIRE |
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