Analyzing UV/Vis/NIR Spectra-Sputtered ZnO:Al Thin-Films—I: Space-Time Depend
Autor: | Andreas Stadler, Astrid Pachler, Herbert Dittrich, Johannes Stöllinger, Dan Topa, Gerhard Aigner |
---|---|
Rok vydání: | 2011 |
Předmět: |
Materials science
Analytical chemistry Substrate (electronics) Sputter deposition Condensed Matter Physics Optical conductivity Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Integrating sphere Sputtering Electrical and Electronic Engineering Thin film Spectroscopy Refractive index |
Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 24:366-374 |
ISSN: | 1558-2345 0894-6507 |
DOI: | 10.1109/tsm.2011.2109742 |
Popis: | Exact, contact-free and non-destructive optical analysis of semiconducting layers is advantageous for thin-film solar cell applications. A non-numerical theoretical model has been developed to extract approximation-free optical and electrical data from UV/visible (Vis)/near infra-red (NIR) spectra. Special focus has been set on single-layer systems. Approximations for thin-films upon substrates and measurements without integrating sphere are provided. Complex parameter evaluation is provided. This exact data acquisition model provides deeper insight into the process-parameter dependencies of pulsed direct current sputtered, transparent aluminum doped zinc-oxide (ZnO:Al) thin films, upon glass substrates. ZnO:Al thin films have been analyzed with respect to space-time dependencies of the sputter process. Therefore, sputter-depositions have been examined, referring to positions upon the substrate, r, target-substrate distances, dTarSub, and sputter durations, tSp . Results were compared with those of the well-known Keradec/Swanepoel model. The necessity of taking both spectra-transmission and reflection spectra-into account has been shown. Theoretical sputter-concepts were proved and enhanced. A non-contact, optical conductivity measurement possibility by use of UV/Vis/NIR spectroscopy has been provided. Optically evaluated conductivities, σL, were compared with electrically taken values, by a four-tip measurement system. |
Databáze: | OpenAIRE |
Externí odkaz: |