dV/dt testing of high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages

Autor:	A. A. Demidov, E. A. Kulchenkov, S. B. Rybalka, A Yu Drakin, D A Knyginin, N A Zhemоedоv
Rok vydání:	2020
Předmět:	History Materials science business.industry Schottky diode High voltage Maximal amplitude Computer Science Applications Education Metal visual_art visual_art.visual_art_medium Optoelectronics Quad Flat No-leads package business Diode Voltage
Zdroj:	Journal of Physics: Conference Series. 1695:012160
ISSN:	1742-6596 1742-6588
Popis:	The dV/dt values for 4H-SiC Schottky type diodes with different type packages have been determined experimentally. It is determined that experimental dV/dt values for 4H-SiC Schottky type diodes in metal-polymeric packages (SOT-89, QFN, PQFN, TO-220) are varying in interval of 645¸1103 V/ns. It is established that the dV/dt dependence on maximal amplitude of reverse voltage demonstrate nonlinear character (close to parabolic dependence) for all studied SiC Schottky type diodes in different type packages.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e23157460094062bf5c4c4f0c1259bb9 https://doi.org/10.1088/1742-6596/1695/1/012160 Zobrazit plný text záznamu