Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films

Autor:	Yasuhide Ohno, Takaomi Kishimoto, Kazuhiko Matsumoto, Koichi Inoue, Kenzo Maehashi
Rok vydání:	2010
Předmět:	Materials science Passivation Annealing (metallurgy) business.industry Transistor General Engineering General Physics and Astronomy Carbon nanotube law.invention law Logic gate Optoelectronics Field-effect transistor Electrical measurements Photolithography business
Zdroj:	Japanese Journal of Applied Physics. 49:06GG02
ISSN:	1347-4065 0021-4922
Popis:	We demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiN x passivation films deposited by catalytic chemical vapor deposition. The carrier type of CNT-FETs was controlled by forming SiN x passivation films. Electrical measurements revealed that the p-type characteristics of CNT-FETs were converted to n-type characteristics after the deposition of SiN x passivation films. Then, the n-type CNT-FETs with SiN x passivation films were reconverted to p-type CNT-FETs by annealing in N2 atmosphere. As a consequence, complementary voltage inverters comprising p- and n-type CNT-FETs with SiN x passivation films were demonstrated on the same SiO2 substrate by conventional photolithography and lift-off techniques. Moreover, the static transfer and dynamic characteristics of the CNT-FET-based inverters were investigated. It was found that a gain of approximately 3 was achieved and that the device was switched properly at frequencies of up to 100 Hz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e23102166218edea48e57ae8797ae568 https://doi.org/10.1143/jjap.49.06gg02 Zobrazit plný text záznamu