An accurate semi-empirical saturation drain current model for LDD n-MOSFET

Autor:	Kai Chen, Chenming Hu, Subhash R. Nariani, D. Pramanik, P.K. Ko, J. Duster, Hsing-Jen Wann
Rok vydání:	1996
Předmět:	Physics Electron mobility Mobility model Equivalent series resistance Velocity saturation MOSFET Electronic engineering Electrical and Electronic Engineering Electric current Scaling Saturation (magnetic) Electronic Optical and Magnetic Materials Computational physics
Zdroj:	IEEE Electron Device Letters. 17:145-147
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.485195
Popis:	Based on a new empirical mobility model which is solely dependent on V/sub gs/, V/sub t/ and T/sub ox/, a corresponding semiempirical I/sub dsat/ model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of I/sub dsat/ for the future generations of device scaling and low-power applications by using this new model is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e22771eede21d7626d3267443731b7a9 https://doi.org/10.1109/55.485195 Zobrazit plný text záznamu