GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off

Autor:	Yuhki Fujino, Koichi Iiyama, N.C. Paul, M. Takebe, Mitoko Tametou, Hiroki Seto, Saburo Takamiya
Rok vydání:	2006
Předmět:	Fabrication Materials science Physics and Astronomy (miscellaneous) business.industry Transconductance General Engineering General Physics and Astronomy chemistry.chemical_element Photoresist Nitrogen Semiconductor Resist chemistry Optoelectronics Field-effect transistor business Nitriding
Zdroj:	Japanese Journal of Applied Physics. 45:2417-2421
ISSN:	1347-4065 0021-4922
Popis:	We have reported that the oxi-nitridation of GaAs forms an insulator–semiconductor interface without deteriorating the crystallographic order of GaAs, and is applicable to the fabrication of compound semiconductor devices with metal–insulator–semiconductor (MIS) gates. A problem with oxi-nitridation is that nitrogen plasma ashes and thins the photoresist and hence restricts the possible nitrogen processing times even if a long nitridation is desirable for a better interface quality. To counteract this restriction, we developed a new processing technique utilizing an 0.3-µm-thick Al layer as a mask for selective etching, oxi-nitridation and lift-off. A high transconductance (185 mS/mm) and sharp pinch-off were obtained by a long (8 h) nitridation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e220697462741a4829be02710887e348 https://doi.org/10.1143/jjap.45.2417 Zobrazit plný text záznamu