Strain–Spintronics: Modulating Electronic and Magnetic Properties of Hf2MnC2O2 MXene by Uniaxial Strain
| Autor: | Edirisuriya M. D. Siriwardane, Pragalv Karki, Yen Lee Loh, Deniz Çakır |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Magnetic moment Condensed matter physics Strain (chemistry) Spintronics business.industry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy Strain engineering Semiconductor Ferromagnetism Curie temperature Physical and Theoretical Chemistry 0210 nano-technology business MXenes |
| Zdroj: | The Journal of Physical Chemistry C. 123:12451-12459 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | Next-generation spintronic nanoscale devices require two-dimensional (2D) materials with robust ferromagnetism. Among 2D materials, MXenes are favorable for spintronic applications due to their high electron conductivity and mobility. A recently reported MXene, Hf2MnC2O2, possesses a high Curie temperature (greater than 800 K) and a high magnetic moment per formula unit (3 μB). Since 2D materials have greater elastic strain limits than their bulk counterparts, their properties can be tuned effectively using strain engineering. Here, we investigate modifications in the structural, electronic, and magnetic properties produced by uniaxial strain on a Hf2MnC2O2 monolayer. The strain-free Hf2MnC2O2 nanosheet is an indirect band-gap semiconductor. Our calculations predict that an indirect-to-direct band-gap transition occurs at about 1–3% tensile strain applied in the armchair direction. At 7% strain applied in the zigzag direction and 9% strain applied in the armchair direction, this semiconductor material bec... |
| Databáze: | OpenAIRE |
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