Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
| Autor: | Mindaugas Lukosius, Malgorzata Sowinska, T. Bertaud, Ch. Walczyk, Bernd Tillack, Ch. Wenger, Mirko Fraschke, Damian Walczyk, Thomas Schroeder |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transistor Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Pulse (physics) Resistive random-access memory Non-volatile memory Process variation CMOS law Optoelectronics Electrical and Electronic Engineering business Pulse-width modulation |
| Zdroj: | Microelectronic Engineering. 88:1133-1135 |
| ISSN: | 0167-9317 |
| Popis: | This work addresses a 1T1R RRAM architecture, which allows for the precise and reliable control of the forming/set current by using an access transistor. The 1T1R devices were fabricated in a modified [email protected] CMOS technology. The memory cells show stable resistive switching in dc as well as pulse-induced mode with an endurance of 10^3 and 10^2cycles, respectively. The variation of pulse widths as a function of amplitudes in 1R devices confirmed the set process distribution over a wide range of pulse widths ([email protected]), whereas the reset process variation is confined ([email protected]). |
| Databáze: | OpenAIRE |
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