Die-attach on Copper by Pressureless Silver Sintering in Formic Acid
| Autor: | Guo-Quan Lu, Yijing Xie, Yunhui Mei, Meiyu Wang, Xin Li |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.product_category Gold plating 020208 electrical & electronic engineering Metallurgy chemistry.chemical_element Sintering dBc 02 engineering and technology Substrate (electronics) Semiconductor device 01 natural sciences Copper chemistry 0103 physical sciences Thermal 0202 electrical engineering electronic engineering information engineering Die (manufacturing) business |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | Sintered-silver die-attach has emerged as an excellent lead-free and reliable solution for high-temperature packaging. However, the most widely reported process involves pressure-assisted silver sintering on direct-bond-copper (DBC) substrates that are surface-finished with silver or gold plating, which adds to the cost of implementing this die-attach technology. One way to lower the cost is to die-attach on uncoated copper by pressure-less silver sintering. However, a challenge for this process is to prevent copper oxidation without significantly slowing the kinetics of silver sintering found in air. In this study, we explored the process of die-attach on copper by pressure-less silver sintering in a mixture atmosphere of formic-acid gas and air. The effects of oxygen fraction in the sintering atmosphere on the performance of an IGBT device bonded on an uncoated DBC substrate were examined. Strong, oxygen-free bond-line with die-shear strength over 30 MPa and excellent thermal and electrical performance of the packaged IGBT were obtained. The results in this study show the feasibility of a low-cost solution for implementing the silver sintering technology in manufacturing power semiconductor devices and/or modules. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|