Minority‐ and majority‐carrier trapping in strain‐relaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical‐vapor deposition

Autor:	P. N. Grillot, Steven A. Ringel, Ya-Hong Xie, G. P. Watson, Eugene A. Fitzgerald
Rok vydání:	1995
Předmět:	Materials science Silicon Electron capture Analytical chemistry General Physics and Astronomy chemistry.chemical_element Heterojunction Electron Chemical vapor deposition Penning trap Molecular physics chemistry Dislocation Thin film
Zdroj:	Journal of Applied Physics. 77:676-685
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.359054
Popis:	Strain‐relaxed Ge0.3Si0.7/Si, grown by rapid thermal chemical‐vapor deposition, has been investigated with deep‐level transient spectroscopy (DLTS) and bias‐dependent electron‐beam‐induced current (EBIC). A single electron trap and several hole traps have been detected in these samples. The apparent electron capture cross section is found to be ∼2×10−13 cm2, which is several orders of magnitude larger than the apparent hole capture cross sections (∼10−17 cm2), and is responsible for the detection of the minority‐carrier electron trap even under reverse‐bias majority‐carrier capture conditions. All observed traps which were investigated as a function of filling pulse time exhibit logarithmic capture kinetics, as expected for extended defects, and the bias‐dependent DLTS peak height and EBIC relative defect contrast are consistent with the spatially varying dislocation density. Moreover, the trap concentration, as determined by DLTS, is correlated to the dislocation density, as determined by EBIC measuremen...
Databáze:	OpenAIRE
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