Evaluation of AlGaN‐based deep ultraviolet emitter active regions by temperature dependent time‐resolved photoluminescence

Autor:	Anand V. Sampath, J. R. Grandusky, G. A. Garrett, Michael Wraback, J. W. Yang, Maxim S. Shatalov, R. Gaska, L. J. Schowalter, Wenhong Sun, Hongen Shen, A. Lunev, Yuriy Bilenko, Michael Shur, Xuhong Hu
Rok vydání:	2010
Předmět:	Nanostructure Materials science Photoluminescence business.industry Condensed Matter Physics medicine.disease_cause Crystallographic defect Impurity medicine Optoelectronics Dislocation business Ultraviolet Common emitter
Zdroj:	physica status solidi c. 7:2390-2393
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200983906
Popis:	Temperature dependent time-resolved photoluminescence is used to study the development of active regions for optoelectronic devices employing AlGaN nanostructures for deep-UV emission. The changing importance of dislocation versus point defects and their relationship to different forms of carrier localization are discussed. The results presented suggest that AlGaN nanostructure development for deep-UV emitters require both point defect/impurity suppression for improved efficiency and lower dislocation density for improved interface quality. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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