Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors
| Autor: | J.R. Long, M.K. Jackson, A.R. Reid, S.J. Kovacic, D. Marchesan, T.C. Kleckner |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon business.industry Thermal resistance Bipolar junction transistor chemistry.chemical_element Heterojunction Isothermal process Electronic Optical and Magnetic Materials Silicon-germanium chemistry.chemical_compound chemistry Trench Electronic engineering Optoelectronics Electrical and Electronic Engineering business Common emitter |
| Zdroj: | IEEE Transactions on Electron Devices. 48:1477-1479 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/16.930671 |
| Popis: | We present a study of thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors (HBTs), using a technique based on isothermal collector current measurement. Measured thermal resistance is in good agreement with a realistic three-dimensional (3-D) numerical model; emitter metallization, shallow trenches, and heat flow through the deep trench walls are all shown to have a significant effect on the thermal resistance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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