Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates
| Autor: | Hongshan Xiao, Jianhua Jiang, Jianwen Zhao, Lian-Mao Peng, Zhiyong Zhang, Maguang Zhu, Pengkun Sun, Zheng Cui, Gangping Yan |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Transistor Carbon nanotube Integrated circuit Electronic Optical and Magnetic Materials law.invention Carbon nanotube field-effect transistor CMOS law Gate oxide Optoelectronics Electronics Irradiation Electrical and Electronic Engineering business Instrumentation |
| Zdroj: | Nature Electronics. 3:622-629 |
| ISSN: | 2520-1131 |
| DOI: | 10.1038/s41928-020-0465-1 |
| Popis: | Electronics devices that operate in outer space and nuclear reactors require radiation-hardened transistors. However, high-energy radiation can damage the channel, gate oxide and substrate of a field-effect transistor (FET), and redesigning all vulnerable parts to make them more resistant to total ionizing dose irradiation has proved challenging. Here, we report a radiation-hardened FET that uses semiconducting carbon nanotubes as the channel material, an ion gel as the gate and polyimide as the substrate. The FETs exhibit a radiation tolerance of up to 15 Mrad at a dose rate of 66.7 rad s−1, which is notably higher than the tolerance of silicon-based transistors (1 Mrad). The devices can also be used to make complementary metal–oxide–semiconductor (CMOS)-like inverters with similarly high tolerances. Furthermore, we show that radiation-damaged FETs can be recovered by annealing at a moderate temperature of 100 °C for 10 min. By using carbon nanotubes as a channel material, an ion gel as a gate and polyimide as a substrate, field-effect transistors can be created that have a high radiation tolerance and can be repaired by annealing. |
| Databáze: | OpenAIRE |
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