Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress
| Autor: | Xiaoming Wang, Wanjun Chen, Ruize Sun, Chao Liu, Yun Xia, Yajie Xin, Xiaorui Xu, Fangzhou Wang, Xinghuan Chen, Yiqiang Chen, Bo Zhang |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 69:5733-5741 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2022.3200928 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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