Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x-As grading heterojunctions formation

Autor:	Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, V. I. Yudaev
Rok vydání:	1980
Předmět:	Stages of growth Materials science business.industry Optoelectronics General Materials Science Nanotechnology Heterojunction General Chemistry Dislocation Condensed Matter Physics business Grading (tumors)
Zdroj:	Kristall und Technik. 15:387-394
ISSN:	1521-4079 0023-4753
DOI:	10.1002/crat.19800150403
Popis:	The initial stages of growth of GaAs–InGaAsPvar–InxGa1−xAs heterostructures (x = 0.1 and 0.17) were investigated for the equilibrium-cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsPvar–In0.05Ga0.95As heterocompositions, but for the step-cooling technique. The scheme of growing of In0.17Ga0.83As films of GaAs substrates with several intermediate buffler InGaAsPvar layers is represented. These heterostructures were shown to have less than 106 cm−2 dislocation density on the overall area of the film (> 2 cm2). [Russian Text Ignored.]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1cf74aa7fbca559842b4d8b06cae061 https://doi.org/10.1002/crat.19800150403 Zobrazit plný text záznamu Plný text