Nanometre precision of semiconductor multilayer growth

Autor:	C. T. Foxon, D. Lippens, O.H. Hughes, D. P. Steenson
Rok vydání:	1996
Předmět:	Materials science business.industry General Mathematics General Engineering General Physics and Astronomy Nanotechnology Improved performance Semiconductor Scientific method Optoelectronics Nanometre business Quantum tunnelling Molecular beam epitaxy
Zdroj:	Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 354:2413-2423
ISSN:	1471-2962 1364-503X
Popis:	This article discusses the limitations imposed by the molecular beam epitaxy (MBE) growth process on the performance of double-barrier resonant tunnelling (DBRT) structures. Improved performance by optimization of the mbe process and appropriate choice of the materials system are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1cf1528b67d9285f97664247e415d52 https://doi.org/10.1098/rsta.1996.0108 Zobrazit plný text záznamu