Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process

Autor:	Takao Oshita, Dror Zilberman, Joseph Shor, D. Duarte, Avner Kornfeld
Rok vydání:	2015
Předmět:	Engineering Thermal sensors business.industry Bipolar junction transistor Resolution (electron density) Electrical engineering Electrical and Electronic Engineering business Cmos process
Zdroj:	IEEE Journal of Solid-State Circuits. 50:799-807
ISSN:	1558-173X 0018-9200
DOI:	10.1109/jssc.2015.2396522
Popis:	Compact thermal sensors ( 50 kS/sec, consumes 1.1 mW with a resolution of 0.5 °C, and has a resolution FOM of 5.7 nJ * C 2 . It is very close to the present BJT sensor state-of-the-art in its size, while being much faster and having a much better FOM than any of the compact BJT sensors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1c8b5e98aa54059e8c9ad3fccc2f453 https://doi.org/10.1109/jssc.2015.2396522 Zobrazit plný text záznamu