Uniform doping of channeled‐ion implantation

Autor:	T. Hisatsugu, Hidetoshi Nishi, T. Furuya, Tsuguo Inada, Takao Kaneda, Sakurai Teruo
Rok vydání:	1978
Předmět:	Materials science Fabrication Silicon business.industry Quantitative Biology::Tissues and Organs Physics::Medical Physics Doping General Physics and Astronomy chemistry.chemical_element Semiconductor device Ion Ion implantation chemistry Optoelectronics Wafer business Diode
Zdroj:	Journal of Applied Physics. 49:608-613
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.324687
Popis:	This paper describes an apparatus designed to obtain spatial uniformity of channeled‐ion implantation using a parallel‐scanning system. Descriptions of the special sample holder which can be tilted in two directions and a detecting scheme for channeling alignment are also included. This apparatus implanted channeled B ions along the [110] axis of silicon (Si). The variations of the implanted profiles and the breakdown voltages of the fabricated diodes in a wafer are compared with those obtained by random implantation and by channeled‐ion implantation using an angular‐scanning system. High doping uniformity comparable to that of random implantation is obtained reproducibly, proving that channeled‐ion implantation using a parallel‐scanning system can provide a controlled technique for device fabrication.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1c2a1e36bd7255bce461beb2b71b139 https://doi.org/10.1063/1.324687 Zobrazit plný text záznamu