Electrical and optical properties of single crystalline α-Al2O3 doped with nickel
Autor: | John-Sea Chen, F. A. Kröger |
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Rok vydání: | 1985 |
Předmět: |
chemistry.chemical_classification
Aluminium oxides Materials science Mechanical Engineering Doping Inorganic chemistry chemistry.chemical_element Polaron Acceptor Crystallographic defect Crystallography Nickel chemistry Mechanics of Materials General Materials Science Single crystal Inorganic compound |
Zdroj: | Journal of Materials Science. 20:3191-3200 |
ISSN: | 1573-4803 0022-2461 |
DOI: | 10.1007/bf00545185 |
Popis: | Nickel, substituting for aluminium in α-Al2O3 acts as an acceptor with a level ∼2.46 eV above the conduction band if a large polaron model applies, ≅ 2.57eV−H(μ h) above the band if a small polaron model applies. It is present as Ni3+ at high, and as Ni2+ at low, oxygen pressures, the concentration of Ni3+ being reduced to one-half of its high $$p_{o_2 } $$ value at $$p_{o_2 } $$ =1 Pa. Analysis of the data provides proof that the native defect compensating the charge of Ni2+ (=ni al ′ ) is V O 2. , Al i 3. being a minority species; H F,Al−1/2H s=121 kJ mol−1. |
Databáze: | OpenAIRE |
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