Electrical and optical properties of single crystalline α-Al2O3 doped with nickel

Autor: John-Sea Chen, F. A. Kröger
Rok vydání: 1985
Předmět:
Zdroj: Journal of Materials Science. 20:3191-3200
ISSN: 1573-4803
0022-2461
DOI: 10.1007/bf00545185
Popis: Nickel, substituting for aluminium in α-Al2O3 acts as an acceptor with a level ∼2.46 eV above the conduction band if a large polaron model applies, ≅ 2.57eV−H(μ h) above the band if a small polaron model applies. It is present as Ni3+ at high, and as Ni2+ at low, oxygen pressures, the concentration of Ni3+ being reduced to one-half of its high $$p_{o_2 } $$ value at $$p_{o_2 } $$ =1 Pa. Analysis of the data provides proof that the native defect compensating the charge of Ni2+ (=ni al ′ ) is V O 2. , Al i 3. being a minority species; H F,Al−1/2H s=121 kJ mol−1.
Databáze: OpenAIRE