Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers
| Autor: | Sylwia Gieraltowska, M. Sobanska, G. Tchutchulashvili, Zbigniew R. Zytkiewicz, Jolanta Borysiuk, K. Klosek, A. Wierzbicka |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon business.industry Nanowire chemistry.chemical_element Nanotechnology Substrate (electronics) Plasma Condensed Matter Physics Buffer (optical fiber) Amorphous solid Inorganic Chemistry Atomic layer deposition chemistry Materials Chemistry Optoelectronics business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 401:657-660 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2014.01.007 |
| Popis: | We report on catalyst-free growth of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy on Si(111) substrates with a thin amorphous Al 2 O 3 buffer layers deposited at low temperature by atomic layer deposition. We show that nanowires obtained are homogenously distributed and well aligned with the c -axis perpendicular to the substrate in a similar way as their counterparts grown without the Al 2 O 3 buffer. However, NWs are twisted nearly randomly and do not show any in-plane alignment with the substrate even for the thinnest (~2 nm) buffer used, which is quite opposite to the behavior observed for NWs grown on a bare silicon. |
| Databáze: | OpenAIRE |
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