Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
| Autor: | Chih-Ren Hsieh, Jen-Chung Lou, Yung-Yu Chen, Gray Lin, Kwung-Wen Lu |
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| Rok vydání: | 2011 |
| Předmět: |
Permittivity
Passivation Dangling bond chemistry.chemical_element Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Vacancy defect Fluorine Aluminium oxide Electrical and Electronic Engineering High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 88:945-949 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2010.12.027 |
| Popis: | In this paper, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al"2O"3) and hafnium oxide (HfO"2) inter-poly dielectric (IPD) are studied. Interface fluorine passivation has been demonstrated in terminating dangling bonds and oxygen vacancies, reducing interfacial re-oxidation and smoothing interface roughness, and diminishing trap densities. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al"2O"3 and HfO"2 IPDs. Moreover, fluorine incorporation will also improve the dielectric quality of the interfacial layer. Although HfO"2 possesses higher dielectric constant to increase the gate coupling ratio, the results also demonstrate that fluorination of the Al"2O"3 dielectric is more effective to promote the IPD characteristics than fluorination of the HfO"2 dielectric. For future stack-gate flash memory application, the fluorinated Al"2O"3 IPD undoubtedly possesses higher potential to replace current ONO IPD than the fluorinated HfO"2 IPD due to superior insulating properties. |
| Databáze: | OpenAIRE |
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