| Autor: |
N N Ablyazov, D Z Garbuzov, V B Khalfin |
| Rok vydání: |
1990 |
| Předmět: |
|
| Zdroj: |
Soviet Journal of Quantum Electronics. 20:1320-1323 |
| ISSN: |
0049-1748 |
| Popis: |
An estimate is obtained of the maximum output power P cW of an injection semiconductor laser per unit width of the active stripe. It is assumed that the power is limited by the optical strength of the mirrors. Several variants of heterostructures with one or several quantum-well GaAs layers in an extended AlGaAs cavity are considered. It is shown that the optimal structure ensuring the maximum radiation power (P cW ~ 2 × 103 W/cm) has a few (bet ween one and three) wells located at the center of a waveguide ~ 3 μm wide. The maximum permissible current density above which the damage to mirrors becomes catastrophic amounts to ~ 10 kA/cm2. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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