Photo-injection p-i-n diode switch for high-power RF switching

Autor:	C.K. Sun, Hugh Nguyen, D.W. Fogliatti, Ching-Ten Chang, E.W. Jacobs, D.J. Albares
Rok vydání:	2002
Předmět:	Radiation Materials science business.industry RF power amplifier Electrical engineering Optical power Condensed Matter Physics Optical switch RF switch Duty cycle Rise time Insertion loss Optoelectronics Radio frequency Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 50:413-419
ISSN:	0018-9480
DOI:	10.1109/22.982217
Popis:	The high RF power-switching properties of the photo-injection p-i-n switch (PIPINS), an optically controlled RF switch, are investigated. Proper functioning of a PIPINS as a low insertion-loss RF switch requires that it operates as a photoconductor, where the photo-injected charge is much greater than the RF sweep out charge. Insertion loss using 650-mW optical power was
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1b5f94118bcbe7e17b00086071e4a6f https://doi.org/10.1109/22.982217 Zobrazit plný text záznamu