Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays
| Autor: | Po-Cheng Lai, Chih-Lung Lin, Chin-Hsien Tseng, Ming-Xun Wang, Fu-Hsing Chen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science business.industry Gate dielectric Transistor Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Gate oxide Thin-film transistor law Logic gate 0103 physical sciences Gate driver Waveform Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices. 64:3494-3497 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are $2.05~\mu$ s, 1.31 $\mu$ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h. |
| Databáze: | OpenAIRE |
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