| Autor: |
Basanth Jagannathan, D. Faken, N. Zhan, Manoj Kumar, B. Cipriany, James P. Norum, K. Greiner, S. Breit, Karen A. Nummy, D. Fried, Shreesh Narasimha, B. Zhang, Rajeev Malik, Paul D. Agnello, Gregory Costrini, J. Meiring, Katsunori Onishi, H. Nanjundappa, Ahmed N. Noemaun, Christopher D. Sheraw, Stephen S. Furkay |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: |
10.1109/sispad.2013.6650583 |
| Popis: |
We present a technology development methodology that relies on 3D virtual fabrication to rapidly improve yield by increasing tolerance to multilevel process variation. This methodology has been successfully implemented in the development and yield ramp of high-performance 22nm SOI CMOS technology. Based on virtual metrology, dedicated testsite structures were designed and implemented, with electrical results corroborating virtual findings, validating the methodology. This 3D virtual fabrication technique was used to implement a delicate process change, and the same testsite structures validated the improved process window yield. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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