Activation energy of Se2Ge0.2Sb0.8 chalcogenide glass by differential scanning calorimetry

Autor:	A. M. Abd El-Salam, M. Abousehly
Rok vydání:	1996
Předmět:	Organic field-effect transistor Differential scanning calorimetry law Chemistry Analytical chemistry Mineralogy Chalcogenide glass Activation energy Crystallization Glass transition Heat flow law.invention Heat capacity rate
Zdroj:	Journal of Thermal Analysis. 46:177-186
ISSN:	1572-8943 0368-4466
DOI:	10.1007/bf01979957
Popis:	Results of differential scanning calorimetry (DSC) at different heating rates on Se2Ge0.2Sb0.8 chalcogenide glass are reported and discussed. As the heating rate (α) changed, also the glass transition temperature (Tg) and onset temperature of crystallization (Tc) changed. As the value of the transition activation energyEt changed, the crystallization fraction (χ), heat flow (Δq and the crystallization peak temperature (Tp) also changed. The value of the effective activation energy of crystallizationEc was calculated by means of six different methods. The Se2Ge0.2Sb0.8 chalcogenide glass has two crystallization mechanisms, a one-dimensional and an other surface crystallization growth. The average value ofEt for Se2Ge0.2Sb0.8 is equal to 194.95±3.9 kJ·mol−1 and the average value ofEc is equal to 164±3.3 kJ·mol−1.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1ab975ee44a213f9e50ea7aabf834f5 https://doi.org/10.1007/bf01979957 Zobrazit plný text záznamu Full text from SpringerLink