On the Enhanced Miller Capacitance of Source-Gated Thin Film Transistors
| Autor: | Yalan Zhang, Lining Zhang, Weiran Cai, Xinke Li, Zhao Rong, Peiwen Wu |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Transistor Order (ring theory) Charge (physics) Hardware_PERFORMANCEANDRELIABILITY Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Capacitance Electronic Optical and Magnetic Materials law.invention Active matrix Computer Science::Hardware Architecture law Thin-film transistor Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Hardware_LOGICDESIGN Voltage |
| Zdroj: | IEEE Electron Device Letters. 41:741-744 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | An enhanced Miller capacitance effect in the source-gated thin film transistors (SGT) is reported in this work. The gate-drain capacitance ${C}_{\textit {gd}}$ is larger than the gate-source capacitance ${C}_{\textit {gs}}$ , as opposed to the capacitance properties in conventional thin film transistors (TFT). By numerical device simulations the enhanced ${C}_{\textit {gd}}$ is attributed to the channel capacitance with a larger partition of channel charge to the drain side. When used as a driving transistor in active matrix display pixels, SGT shows an overshoot current imposing on the light-emitting device. Reducing the operation voltage ${V}_{\textit {dd}}$ for low power consumption worsen the reliability issue. In order to suppress the stressing current, special pixel signal designs with larger transition time are shown effective. |
| Databáze: | OpenAIRE |
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