Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
| Autor: | Wolfgang J. Choyke, Robert P. Devaty, David J. Larkin, S. G. Sridhara |
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| Rok vydání: | 1995 |
| Předmět: |
inorganic chemicals
Argon Materials science Hydrogen Passivation Inorganic chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Secondary ion mass spectrometry chemistry.chemical_compound chemistry Materials Chemistry Silicon carbide Electrical and Electronic Engineering Boron |
| Zdroj: | Journal of Electronic Materials. 24:289-294 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02659689 |
| Popis: | We report on the initial investigations of using site-competition epitaxy to control boron incorporation in chemical vapor deposition (CVD) 6H-SiC epilayers. Also reported herein is the detection of hydrogen in boron-doped CVD SiC epilayers and hydrogen-passivation of the boron-acceptors. Results from low temperature photoluminescence (LTPL) spectroscopy indicate that the hydrogen content increased as the capacitance-voltage (C-V) measured net hole concentration increased. Secondary ion mass spectrometry (SIMS) analysis revealed that the boron and the hydrogen incorporation both increased as the Si/ C ratio was sequentially decreased within the CVD reactor during epilayer growth. Epilayers that were annealed at 1700°C in argon no longer exhibited hydrogen-related LTPL lines, and subsequent SIMS analysis confirmed the outdiffusion of hydrogen from the boron-doped SiC epilayers. The C-V measured net hole concentration increased more than threefold as a result of thel700°C anneal, which is consistent with hydrogen passivation of the boron-acceptors. However, boron related LTPL lines were not observed before or after the 1700°C anneal. |
| Databáze: | OpenAIRE |
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