Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties
| Autor: | K. A. Bobojonov, T. M. Saliev, M. U. Hajiev, I. G. Atabaev, N. A. Matchanov |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Schottky barrier fungi technology industry and agriculture chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Germanide Nickel chemistry.chemical_compound chemistry Chemical engineering Etching (microfabrication) Surface chemical Layer (electronics) Sheet resistance |
| Zdroj: | Semiconductors. 44:1606-1610 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782610120134 |
| Popis: | The effect of various chemical treatments of the alloy surface on the properties of Ti-p-SiGe and Ni-p-SiGe contacts fabricated by vacuum thermal deposition at a substrate temperature of 350–400°C has been studied. Etching under various conditions is used to form an initial surface with various surface-state densities. It is shown that an intermediate nickel germanosilicide layer is formed in nickel-based structures during thermal deposition of contacts, which has a significant effect on the current-voltage and capacitance-voltage characteristics of structures. |
| Databáze: | OpenAIRE |
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