Analysis of Electronic Devices with a Three-Dimensional Atom Probe

Autor:	Sergej Mutas
Rok vydání:	2013
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality
Zdroj:	EDFA Technical Articles. 15:4-11
ISSN:	1537-0755
Popis:	This article discusses the basic procedures involved in atom probe tomography (APT) and demonstrates its use on complex material stacks. Although still a relatively new technique, APT has moved to the forefront of semiconductor failure analysis because it can provide 3D chemical composition of a wide range of materials on a near-atomic scale.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e1a1436f70341e6ca1557cc1a976bfb2 https://doi.org/10.31399/asm.edfa.2013-4.p004 Zobrazit plný text záznamu Plný text ve formátu PDF