FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate

Autor:	Kyoungsub Shin, Thomas Schulz, Mark Kennard, Tiehui Liu, C. Rinn Cleavelin, Weize Xiong, Ian Cayrefourcq, P. Patruno, Klaus Schruefer, Carlos Mazure
Rok vydání:	2006
Předmět:	Electron mobility Materials science business.industry Silicon on insulator Insulator (electricity) Strained silicon Metal visual_art Ultimate tensile strength Electrode visual_art.visual_art_medium Electronic engineering Optoelectronics business Performance enhancement
Zdroj:	2006 64th Device Research Conference.
DOI:	10.1109/drc.2006.305109
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e19dd0e5f64829d5d43e1dc08bb53e74 https://doi.org/10.1109/drc.2006.305109 Zobrazit plný text záznamu