Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition

Autor:	Jeff Gaskell, Paul R. Chalker, Stephen Taylor, Peter Nicholas Heys, Anthony C. Jones, Helen C. Aspinall, Pouvanart Taechakumput, R. Odedra
Rok vydání:	2007
Předmět:	Permittivity Atomic layer deposition Materials science Physics and Astronomy (miscellaneous) chemistry Annealing (metallurgy) Analytical chemistry Lanthanum chemistry.chemical_element Relative permittivity Dielectric Thin film Amorphous solid
Zdroj:	Applied Physics Letters. 91:112912
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2784956
Popis:	Thin films of lanthanum zirconium oxide, LaxZr1−xO2−δ (x=0.22,0.35,0.63), have been grown by liquid injection atomic layer deposition using [(PriCp)3La] and [(MeCp)2ZrMe(OMe)] precursors. At lower La atomic fractions (x=0.22) films were stabilized in the cubic phase after annealing at 700°C in air. At higher La atomic fractions (x>0.35), the films remained amorphous after annealing. The films deposited showed good dielectric properties with low hysteresis voltages and negligible flatband voltage shifts. The relative permittivity (κ) ranged from 11 to 14 with leakage current densities at 1MVcm−1 in the range of 2.6×10−6–5.3×10−7Acm−2.
Databáze:	OpenAIRE
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