Cathodoluminescence of undoped and Zn-doped GaN epitaxial layers

Autor:	A. V. Solomonov, L. A. Marasina, A. N. Pikhtin, I. G. Pichugin
Rok vydání:	1976
Předmět:	Materials science business.industry Doping Analytical chemistry Gallium chloride Cathodoluminescence Condensed Matter Physics Epitaxy Decomposition Electronic Optical and Magnetic Materials Optoelectronics Zn doped business Luminescence Zn doping
Zdroj:	Physica Status Solidi (a). 38:753-760
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210380238
Popis:	Luminescence of GaN epitaxial layers grown by decomposition of complex gallium chloride ammonide GaCl3. NH3 in N2-ambient is discussed. Zn doping results in an intensive emission peak at (2.87 ± 0.02) eV with a halfwidth of about 0.4 eV. A correlation of luminescence intensity with doping conditions is analyzed. [Russian Text Ignored].
Databáze:	OpenAIRE
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