Nitride-based stacked laser diodes with a tunnel junction
| Autor: | Yasufumi Takagi, Harumasa Yoshida, Yuta Aoki, Masakazu Kuwabara, Junya Maeda, Satoru Okawara |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Laser diode Electrical junction business.industry General Engineering General Physics and Astronomy 02 engineering and technology Nitride 021001 nanoscience & nanotechnology Epitaxy Laser 01 natural sciences law.invention law Tunnel junction 0103 physical sciences Optoelectronics 0210 nano-technology business Lasing threshold Diode |
| Zdroj: | Applied Physics Express. 11:012701 |
| ISSN: | 1882-0786 1882-0778 |
| DOI: | 10.7567/apex.11.012701 |
| Popis: | We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively. |
| Databáze: | OpenAIRE |
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