Crystallized amorphous deposits for relaxed epitaxy: CdTe(001) on GaAs(001)

Autor:	N. K. Dhar, C. E. C. Wood
Rok vydání:	1995
Předmět:	Materials science business.industry General Physics and Astronomy Epitaxy Cadmium telluride photovoltaics law.invention Amorphous solid Crystallography law Lattice (order) Optoelectronics Specular reflection Crystallization Dislocation business
Zdroj:	Journal of Applied Physics. 78:4463-4466
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.359855
Popis:	When annealed, thin amorphous deposits of highly lattice mismatched materials provide specular crystalline surfaces for epitaxy. Mismatch strain is predominantly relieved by misfit dislocations propagating in the plane of the interface, so that resulting films have low threading dislocation densities. We demonstrate the application of this concept to the growth of (001) oriented CdTe epitaxy on (001) GaAs.
Databáze:	OpenAIRE
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