On the degradation of 1-MeV electron irradiated Si/sub 1-x/Ge/sub x/ diodes
| Autor: | J. Poortmans, P. Clauws, Jan Vanhellemont, Hidenori Ohyama, Matty Caymax, Hiromi Sunaga |
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| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Electron capture Annealing (metallurgy) chemistry.chemical_element Germanium Semiconductor device Atmospheric temperature range Crystallographic defect Nuclear Energy and Engineering chemistry Electron beam processing Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 41:487-494 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.299788 |
| Popis: | The degradation of n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ diodes, which are fabricated on strained Si/sub 1-x/Ge/sub x/ epitaxial layers grown on conventional p-type Si substrates, is investigated through the study of the annealing behaviour of forward and reverse diode current and the electrically active defects induced in the Si/sub 1-x/Ge/sub x/ epitaxial layers. The diodes are irradiated at room temperature with 1-MeV electrons with fluences ranging from 10/sup 14/ to 10/sup 15/ e/cm/sup 2/ in a high voltage transmission electron microscope. The germanium fraction of the Si/sub 1-x/Ge/sub x/ epitaxial layer used for the diodes in this study is x=0.12 and 0.16. The degradation of the diode performance and the presence of deep levels are investigated as a function of electron fluence and germanium content. The degradation of the x=0.12 diodes is more remarkable than that of the x=0.16 diodes. In order to examine the recovery process, isochronal thermal anneals are performed in the temperature range between 100 and 350/spl deg/C. From the annealing behaviour, it is pointed out that the electron capture levels, which are related with interstitial boron, are mainly responsible for the increase of reverse and forward current. > |
| Databáze: | OpenAIRE |
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