Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization

Autor:	Yu Chieh Kuo, Ting-Chang Chang, Pei Lin Chang, Po Yu Yang, Po-Tsun Liu, Fon Shan Huang, Kon Tsu Kin, Chih Tsung Tsai
Rok vydání:	2007
Předmět:	chemistry.chemical_compound Materials science Physics and Astronomy (miscellaneous) X-ray photoelectron spectroscopy chemistry Sputtering Transmission electron microscopy Oxide Analytical chemistry Dielectric Thin film Sputter deposition Electron spectroscopy
Zdroj:	Applied Physics Letters. 91:012109
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2753762
Popis:	A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150°C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5vol% propyl alcohol and 5vol% H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5A thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e17f4d8005c9bd5ec064efbf057b9883 https://doi.org/10.1063/1.2753762 Zobrazit plný text záznamu