InGaN nanoinclusions in an AlGaN matrix
| Autor: | A. F. Tsatsul’nikov, V. V. Lundin, V. S. Sizov |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Nanostructure
Photoluminescence Materials science Condensed matter physics business.industry Atmospheric temperature range Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Matrix (mathematics) Quantum dot Optoelectronics Luminescence business |
| Zdroj: | Semiconductors. 42:788-793 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782608070075 |
| Popis: | GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence spectra are obtained for both types of structures in a temperature range of 80–300 K and at various pumping densities, and electroluminescence spectra are obtained for light-emitting (LED) structures with various types of active region. It is shown that the structures with quantum dots in the AlGaN matrix are more stable thermally due to the larger localization energy compared with quantum dots in the GaN matrix. Due to this, the LED structures with quantum dots in an AlGaN matrix are more effective. |
| Databáze: | OpenAIRE |
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