Dry Etching of Single‐Crystal Silicon Trench in Hydrogen Iodide Containing Plasmas: I . Pure
| Autor: | W. E. Frank, T. Chabert |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Range (particle radiation)
Plasma etching Silicon Renewable Energy Sustainability and the Environment Chemistry Analytical chemistry chemistry.chemical_element Mineralogy Plasma Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Etching (microfabrication) Trench Materials Chemistry Electrochemistry Hydrogen iodide Dry etching |
| Zdroj: | Journal of The Electrochemical Society. 140:490-495 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2221074 |
| Popis: | Hydrogen iodide (HI) has been introduced for plasma etching of single-crystal silicon trench. For part I of this work, pure HI chemistry has been investigated. HI forms an intensive, easily ignitable, and sustainable plasma, characterized by a very low self-bias voltage, typically less than -80 V. The etching of silicon is only successful in the pressure range below 12 Pa. A suitable RF power range is from 150 to 300 W with an HI flow from 10 to 70 sccm. In these parameter ranges etch rates up to 400 nm/min can be obtained. The selectivity to the mask SiO 2 varies in the range from 30 to more than 150:1. The etch profile is tapered with a slope of 60 to 89 o . In practical use we did not encounter any problems with the handling of HI or with contamination of the chamber and the pumps |
| Databáze: | OpenAIRE |
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