Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications
| Autor: | Akito Nishii, Shin Ichi Nishizawa, Akihiko Furukawa, Fumihito Masuoka, Katsumi Nakamura |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Computer simulation business.industry Insulated-gate bipolar transistor Plasma Flyback diode 01 natural sciences Cathode Electronic Optical and Magnetic Materials Power (physics) law.invention law Electric field 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 66:4842-4849 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2019.2941710 |
| Popis: | In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|