| Autor: |
You-Lin Wu, S. Y. Chiu, M. S. Feng, Ying-Lang Wang, Y. S. Huan, Chun-Ching Tsan, Jowei Dun |
| Rok vydání: |
1999 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2341 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.590915 |
| Popis: |
A detailed study for the high density plasma chemical vapor deposition (HDP-CVD) process was presented to prevent metal distortion issues and metal corrosion risk. The deposition temperature increased and then saturated as the film deposited, based on the correlation of wet-etch rate and deposition temperature. The stress of HDP-CVD film also trended up, but the deposition rate decreased. Lowering of the deposition temperature of HDP-CVD film was key to preventing the metal distortion. A two-step deposition recipe with 10 s Ar cooldown was developed to solve the metal distortion issue on subquarter micron devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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