| Autor: |
Wladek Walukiewicz, Mitsuhiro Nishio, P.R. Stone, Jeffrey W. Beeman, Lothar A. Reichertz, Kin Man Yu, Tooru Tanaka, Oscar D. Dubon, Vincent M. Kao |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 35th IEEE Photovoltaic Specialists Conference. |
| DOI: |
10.1109/pvsc.2010.5614215 |
| Popis: |
We describe the fabrication of ZnTe 1−x O x intermediate band solar cell (IBSC) using the combination of oxygen ion implantation and pulsed laser melting. Also, we report the first demonstration of homojunction ZnTe solar cells in which n-ZnTe layer is fabricated by thermal diffusion of Al into p-ZnTe. The preliminary results of the ZnTe 1−x O x IBSC are compared with the ZnTe cell. The homojunction ZnTe solar cells exhibited photovoltaic activity with an open circuit voltage of approximately 0.9 V and a maximum short circuit current (J SC ) of 1.75 mA/cm2. J SC was found to depend strongly on the location of pn-junction, with shallower pn-junction depth, corresponding to higher J SC . Photo-modulated reflectance spectra of ZnTe 1−x O x , show two optical transitions from the valence band to the conduction subband E+ (∼2.5 eV) and from the valence band to the intermediate band E− (∼1.7 eV). The external quantum efficiency of ZnTe 1∼x O x solar cell clearly shows PV responses due to the transition from valence band to the two conduction subbands (E− and E+) demonstrating the photovoltaic action through the intermediate band in this highly mismatched alloy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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