Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition
| Autor: | Fangfang Zhang, Xingfang Liu, Wen Zhengxin, Y.P. Zeng, Junxiu Chen, Shen Zhanwei, Yan Guoguo, Guo Sheng Sun, Wanshun Zhao, B. Liu, Lishuang Wang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry chemistry.chemical_element 02 engineering and technology Surface finish Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Inorganic Chemistry Root mean square chemistry.chemical_compound symbols.namesake chemistry 0103 physical sciences Materials Chemistry Chlorine symbols Growth rate 0210 nano-technology Hydrogen chloride Raman spectroscopy |
| Zdroj: | Journal of Crystal Growth. 504:7-12 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2018.09.030 |
| Popis: | We present process optimization for rapid homoepitaxial growth of thick 4H-SiC films on 4° off-cut substrates via hydrogen chloride chemical vapor deposition (HCVD). The gas used is a mixture of HCl additive, SiH4, C2H4 and H2. After characterization of the 4H-SiC films using Nomarski, AFM, Raman and XRD, we investigate the effect of HCl additive, Cl/Si ratio, on the quality of the epitaxial film and the growth rate. With the optimized chlorine based method HCVD, the 4H-SiC epitaxial growth rate was up to 52 μm/h in a home-made vertical hot-wall HCVD system. At a steady growth rate of 46 μm/h, a 4H-SiC epitaxial film with a thickness of 100 μm was obtained. The epitaxial films were of homogeneous 4H polytype, with a maximum root mean square roughness (RMS) of 1.3 nm. |
| Databáze: | OpenAIRE |
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